Self-aligned AlGaAs/GaAs double heterostructure lasers grown by organometallic vapor phase epitaxy (OMVPE)

被引：0

作者：

Lee, B.J. ^{[1
]}

Chen, C.Y. ^{[1
]}

Hsu, C.C. ^{[1
]}

Chang, C.M. ^{[1
]}

机构：

[1] Industrial Technology Research Inst, Taiwan

来源：

MRL bulletin of research and development | 1988年 / 2卷 / 02期

关键词：

Crystals--Epitaxial Growth - Organometallics--Vapor Deposition - Semiconducting Aluminum Compounds--Growth - Semiconducting Gallium Arsenide--Growth - Semiconductor Diodes--Efficiency;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Self-aligned AlGaAs/GaAs double heterostructures were grown by a two-step OMVPE process. The unique feature of this process is that with only a single photolithographic processing step both mode control and current confinement can be obtained simultaneously. The laser diodes operate in the stable fundamental transverse mode with threshold currents of 74mA and differential quantum efficiency of 0.6 W/A. Output power per facet as high as 45 mw was obtained in a pulse operation.

引用

页码：5 / 8

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