High-resolution focused ion beam lithography

被引：11
|
作者：
Matsui, Shinji [1 ]
Kojima, Yoshikatsu [1 ]
Ochiai, Yukinori [1 ]
Honda, Toshiyuki [1 ]
Suzuki, Katsumi [1 ]
机构：
[1] NEC Corp, Japan
来源：
Microelectronic Engineering | 1990年 / 11卷 / 1-4期
关键词：
Ion Beams - Lithography - Semiconductor Devices; MOS;
D O I：
10.1016/0167-9317(90)90144-I
中图分类号：
学科分类号：
摘要：
The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and the fine pattern fabrication. In proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm linewidth novolak based negative resist could be fabricated at 2×1012 ion/cm2 dose by 260 keV Be++ FIB with 0.1 μm beam diameter. FIB lithography has also been applied to fabricating 0.1 μm NMOS gate patterns and X-ray masks.
引用
收藏
页码：427 / 430
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