Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 3卷 / 1316期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Structural and optical properties of ge nanocrystals in SiO2 glasses fabricated by multi-energy ion implantation
    Masuda, K
    Yamamoto, M
    Kanaya, M
    Kanemitsu, Y
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 172 - 173
  • [42] Formation of 2-D arrays of silicon nanocrystals in thin SiO2 films by very-low energy Si+ ion implantation
    Normand, P
    Tsoukalas, D
    Kapetanakis, E
    Van den Berg, JA
    Armour, DG
    Stoemenos, J
    Vieu, C
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1998, 1 (02) : 88 - 90
  • [43] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
  • [44] Co-Au core-shell nanocrystals formed by sequential ion implantation into SiO2
    Kluth, P.
    Hoy, B.
    Johannessen, B.
    Dunn, S. G.
    Foran, G. J.
    Ridgway, M. C.
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [45] Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing -: art. no. 104330
    Duguay, S
    Grob, JJ
    Slaoui, A
    Le Gall, Y
    Amann-Liess, M
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [46] Raman monitoring of ZnSe and ZnSxSe1-x nanocrystals formed in SiO2 by ion implantation
    Makhavikou, M.
    Parkhomenko, I.
    Vlasukova, L.
    Komarov, F.
    Milchanin, O.
    Mudryi, A.
    Zhivulko, V.
    Wendler, E.
    Togambayeva, A.
    Korolik, O.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 435 : 56 - 60
  • [47] Electrical and Optical Properties of SiO2 Thin Layers Implanted with Zn Ions
    Czarnacka, K.
    Koltunowicz, T. N.
    Makhavikou, M.
    Parkhomenko, I.
    Komarov, F. F.
    ACTA PHYSICA POLONICA A, 2019, 136 (02) : 274 - 277
  • [48] INFLUENCE OF THE PREOXIDATION CLEANING ON THE ELECTRICAL-PROPERTIES OF THIN SIO2 LAYERS
    PROM, JL
    CASTAGNE, J
    SARRABAYROUSE, G
    MUNOZYAGUE, A
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (01): : 20 - 22
  • [49] Ion beam synthesis and charge storage behavior of Au nanocrystals in thin SiO2 layers
    Beyer, V.
    Eichhorn, F.
    Von Borany, J.
    Mücklich, A.
    Müller, T.
    Journal of Applied Physics, 2008, 104 (02):
  • [50] Ion beam synthesis and charge storage behavior of Au nanocrystals in thin SiO2 layers
    Beyer, V.
    Eichhorn, F.
    von Borany, J.
    Muecklich, A.
    Mueller, T.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (02)
12345