Dielectric relaxation associated with ionic hopping transport in KTiOPO4 single crystal

被引：0
|
作者：
Choi, Byung-Chun [1 ]
Kim, Jeong-Bae [1 ]
Kim, Jung-Nam [1 ]
机构：
[1] Pusan Natl Univ of Technology, Pusan, Korea, Republic of
来源：
Ferroelectrics | 1994年 / 155卷 / 1 -4 pt 5期
关键词：
Dielectric relaxation - Electron transport properties - Ionic conduction - Ions - Numerical analysis - Potassium compounds;
D O I：
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中图分类号：
学科分类号：
摘要：
By means of the measurement of complex dielectric susceptibilities of KTP single crystal, a new dielectric relaxation has been found in KTP below 300°C. The origin of relaxation may be due to the hopping transport of K+-ions. Consequently, it is confirmed that Vogel-Fulcher law well describes the dielectric relaxation in KTP.
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页码：183 / 188
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