Velocity saturation in the collector of Si/Gex Si1-x/Si HBT's

被引：0
|
作者：
Cottrell, Peter E. [1 ]
Yu, Zhiping [1 ]
机构：
[1] Center for Integrated Syst, Stanford, Univ, CA, USA
来源：
Electron device letters | 1990年 / 11卷 / 10期
关键词：
10;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：431 / 433
相关论文
共 50 条
  • [1] Band structure of strained Si1-x Gex
    Song Jian-Jun
    Zhang He-Ming
    Hu Hui-Yong
    Xuan Rong-Xi
    Dai Xian-Ying
    ACTA PHYSICA SINICA, 2009, 58 (11) : 7947 - 7951
  • [2] VELOCITY SATURATION IN THE COLLECTOR OF SI/GEXSI1-X/SI HBTS
    COTTRELL, PE
    YU, ZP
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) : 431 - 433
  • [3] Y-branch wavelength signal divider on Si1-x Gex/Si
    Xi'an Jiaotong Univ, Xi'an, China
    Hongwai Yu Haomibo Xuebao, 4 (251-255):
  • [4] Model of intrinsic carrier concentration of strained Si/(001)Si1-x Gex
    Song Jian-Jun
    Zhang He-Ming
    Hu Hui-Yong
    Dai Xian-Ying
    Xuan Rong-Xi
    ACTA PHYSICA SINICA, 2010, 59 (03) : 2064 - 2067
  • [5] Si/Si1-X Gex superlattice structure from X-ray-scattering data
    Yakunin S.N.
    Pashaev E.M.
    Zaitsev A.A.
    Subbotin I.A.
    Rzaev M.M.
    Imamov R.M.
    Russian Microelectronics, 2005, 34 (04) : 242 - 251
  • [6] Stress relaxation of Si/Si1-x Gex/Si structure prepared by ion implantation and subsequent annealing process
    Xu Wenting
    Tu Hailing
    Chang Qing
    Xiao Qinghua
    RARE METALS, 2011, 30 (03) : 270 - 273
  • [7] Engineering of dense arrays of Vertical Si1-x Gex nanostructures
    Muller, J.
    Lecestre, A.
    Demoulin, R.
    Cristiano, F.
    Hartmann, J-M
    Larrieu, G.
    NANOTECHNOLOGY, 2023, 34 (10)
  • [8] Physically-based modeling for hole scattering rate in strained Si1-x Gex/(100)Si
    王斌
    胡辉勇
    张鹤鸣
    宋建军
    张玉明
    JournalofCentralSouthUniversity, 2015, 22 (02) : 430 - 436
  • [9] SI/SI1-X GEX/SI HETEROSTRUCTURE GROWTH BY ULTRACLEAN LOW-TEMPERATURE LPCVD FOR THE FABRICATION OF NOVEL HETERODEVICE
    MUROTA, J
    MAEDA, T
    GOTO, K
    SAKAMOTO, K
    AIZAWA, K
    USHIODA, S
    ONO, S
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 403 - 410
  • [10] Si+ ion implantation influence on photoluminescence in Si1-x Gex/Si quantum wells grown by molecular beam epitaxy
    Yang, Yu
    Xia, Guan-Qun
    Zhao, Guo-Qing
    Wang, Xun
    Wuli Xuebao/Acta Physica Sinica, 47 (06): : 983 - 984
12345