INFLUENCE OF STRUCTURE DEFECTS ON THE DAMAGE THRESHOLD OF ZnSe CRYSTALS.

被引：2
|
作者：
Kompaniets, Yu.V.
Melnikov, B.V.
Shatilov, A.V.
机构：
来源：
Soviet journal of quantum electronics | 1981年 / 11卷 / 09期
关键词：
LASER BEAMS - Effects;
D O I：
10.1070/QE1981v011n09ABEH008364
中图分类号：
学科分类号：
摘要：
Optical breakdown in the bulk of ZnSe subjected to tau approximately equals 100 nsec pulses of lambda equals 10. 6 mu laser radiation resulted from thermoelastic damage of submicron gas-selenium particles containing radiation-absorbing associates of carbon with oxygen and hydrogen. The breakdown power density was governed by the nature of defects which they decorated. The proposed grading of the defect content of crystals should make it possible to estimate the bulk optical strength of zinc selenide without destructive testing.
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页码：1228 / 1230
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