INFLUENCE OF DEVIATIONS FROM THE CRYSTAL LATTICE PERIODICITY ON THE SEMICONDUCTOR-METAL PHASE TRANSITION IN VANADIUM DIOXIDE.

被引:0
|
作者
Begishev, A.R.
Galiev, G.B.
Ignat'ev, A.S.
Mokerov, V.G.
Poshin, V.G.
机构
来源
| 1978年 / 20卷 / 06期
关键词
SEMICONDUCTOR MATERIALS;
D O I
暂无
中图分类号
学科分类号
摘要
An experimental investigation was made of the influence of departures from the lattice periodicity on the semiconductor-metal phase transition in VO//2. There was no definite critical size r of a region with a periodic distribution of atoms (crystallite) below which the phase transition was absent although there were grounds to expect the influence of r on the phase transition in VO//2 to appear only for very low values of r (amounting to hundreds and, possibly, tens of angstroms). The occurrence of the phase transition was demonstrated for amorphous samples. Deviations from periodicity in the distribution of atoms (reduction in r) broadened the temperature range DELTA t//t within which there were changes in the optical and electrical properties associated with the phase transition; moreover, departures from periodicity increased the width of the thermal hysteresis region DELTA t//H and reduced the effective temperature of the phase transition t**e**f**f//t. The increases in DELTA t//t and DELTA t//H were attributed to, respectively, the spatial inhomogeneity of the factors influencing t//t and to the thermodynamic nonequilibrium of the state of matter with a disordered distribution of atoms. The lowering of t**e**f** f//t was explained by destabilization of the insulator state because of the destruction of the characteristic low-temperature order of the VV pairs and consequent delocalization of the 3d electrons located near these VV molecules because of the presence of structure defects. The spectrum of the changes in the optical properties at the phase transition was practically the same in polycrystalline and amorphous samples and this, together with the occurrence of the phase transition in the amorphous samples, was evidence of a decisive contribution made to the phase transition (and the associated changes in VO//2) by the components of the electron structure determined by the short order.
引用
收藏
页码:951 / 955
相关论文
共 50 条
  • [21] SOME PECULIARITIES OF PROPERTIES OF VANADIUM DIOXIDE FILMS NEAR SEMICONDUCTOR-METAL PHASE-TRANSITION
    GERBSHTEIN, YM
    SMIRNOVA, TV
    TERUKOV, EI
    CHUDNOVSKII, FA
    FIZIKA TVERDOGO TELA, 1976, 18 (02): : 503 - 505
  • [22] SEMICONDUCTOR-METAL PHASE-TRANSITION IN OXYGEN VANADIUM BRONZES
    KAPUSTKIN, VK
    FOTIEV, AA
    VOLKOV, VL
    DOKLADY AKADEMII NAUK SSSR, 1975, 223 (06): : 1398 - 1400
  • [23] Effect of chemisorption of donor and acceptor gases on the semiconductor-metal phase transition in vanadium dioxide films
    Tutov, E. A.
    Zlomanov, V. P.
    PHYSICS OF THE SOLID STATE, 2013, 55 (11) : 2351 - 2354
  • [24] Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
    Liang Jiran
    Hu Ming
    Kan Qiang
    Liang Xiuqin
    Wang Xiaodong
    Li Guike
    Chen Hongda
    RARE METALS, 2011, 30 (03) : 247 - 251
  • [26] INFRARED-SPECTROSCOPY IN THE VICINITY OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN SINGLE-CRYSTAL FILM OF VANADIUM DIOXIDE ON SAPPHIRE
    IGNATENKO, VM
    KSHNYAKINA, SI
    YAKOVLEV, VA
    UKRAINSKII FIZICHESKII ZHURNAL, 1994, 39 (02): : 174 - 176
  • [27] Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
    Jiran Liang
    Ming Hu
    Qiang Kan
    Xiuqin Liang
    Xiaodong Wang
    Guike Li
    Hongda Chen
    Rare Metals, 2011, 30 : 247 - 251
  • [28] SEMICONDUCTOR-METAL PHASE-TRANSITION INVESTIGATION IN VANADIUM DIOXIDE FILMS BY THE METHOD OF PULSE PHOTOTHERMAL DEFORMATION
    AVILOV, AS
    VINTZENTZ, SV
    LEVSHIN, NL
    POROYKOV, SY
    KHITROVA, VI
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1993, 57 (09): : 43 - 47
  • [29] PHOTOEMISSION-STUDY OF HYDROGEN ADSORPTION ON VANADIUM DIOXIDE NEAR THE SEMICONDUCTOR-METAL PHASE-TRANSITION
    BERMUDEZ, VM
    WILLIAMS, RT
    LONG, JP
    REED, RK
    KLEIN, PH
    PHYSICAL REVIEW B, 1992, 45 (16): : 9266 - 9271
  • [30] THERMOMODULATION OF OPTICAL-PROPERTIES OF VANADIUM DIOXIDE BELOW TEMPERATURE OF SEMICONDUCTOR-METAL PHASE-TRANSITION
    BEGISHEV, AR
    MOKEROV, VG
    FIZIKA TVERDOGO TELA, 1975, 17 (12): : 3647 - 3649