Acoustic charge transport signal processors

被引：0

作者：

Kansy, R.J. ^{[1
]}

Hoskins, M.J. ^{[1
]}

Fleisch, D.A. ^{[1
]}

Hunsinger, B.J. ^{[1
]}

机构：

[1] Electronic Decisions Inc, United States

来源：

Microwave journal | 1988年 / 31卷 / 11期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconductor Devices, Charge Transfer

引用

共 50 条

[41] Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon
Buyukkose, S.
Vratzov, B.
van der Veen, J.
Santos, P. V.
van der Wiel, W. G.
APPLIED PHYSICS LETTERS, 2013, 102 (01)
[42] NUMERICAL-MODEL FOR ELECTRICAL CHARGE INJECTION IN THE ACOUSTIC CHARGE-TRANSPORT DEVICE
BOGUS, EG
HOSKINS, MJ
HUNSINGER, BJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) : 822 - 830
[43] A SIMPLIFIED AND EFFICIENT NUMERICAL-MODEL FOR CHARGE INJECTION IN ACOUSTIC CHARGE TRANSPORT DEVICES
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MALOCHA, DC
LIOU, JJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (08) : 1811 - 1820
[44] VERY FAST SIGNAL PROCESSORS AS A RESULT OF THE COUPLING OF SURFACE ACOUSTIC-WAVE AND DIGITAL TECHNOLOGIES
GAUTIER, H
TOURNOIS, P
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (05) : 404 - 409
[45] THRESHOLD VOLTAGE OF CHARGE STORAGE IN ACOUSTIC-CHARGE-TRANSPORT DEVICES - EXPERIMENTS AND MODEL
SCHMUKLER, B
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APPLIED PHYSICS LETTERS, 1988, 52 (06) : 428 - 430
[46] Analytical one-dimensional model for acoustic charge transport
Vasil'ev, I.L., 1600, (41):
[47] SIMPLE THEORY OF BURIED CHANNEL ACOUSTIC CHARGE TRANSPORT IN GAAS
HOSKINS, MJ
HUNSINGER, BJ
JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 413 - 426
[48] Analytical one-dimensional model for acoustic charge transport
Vasilev, IL
Kikkarin, SM
Nomokonov, DV
Yakovkin, IB
ACOUSTICAL PHYSICS, 1995, 41 (06) : 784 - 790
[49] Effects of grating size on acoustic charge transport properties on GaAs
1600, (71):
[50] RESPONSE CHARACTERISTICS OF TRAPPING LOSS IN ACOUSTIC CHARGE TRANSPORT DEVICES
JANES, DB
HOSKINS, MJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2452 - 2458

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