Photoluminescence of n-type CdTe:I grown by molecular beam epitaxy

被引:0
|
作者
Giles, N.C.
Lee, Jaesun
Rajavel, D.
Summers, C.J.
机构
来源
Journal of Applied Physics | 1993年 / 73卷 / 09期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Wurtzite CdS on CdTe grown by molecular beam epitaxy
    Boieriu, P
    Sporken, R
    Xin, Y
    Browning, ND
    Sivananthan, S
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) : 718 - 722
  • [32] Characterization of In doped CdTe grown by molecular beam epitaxy
    Kang, TW
    Leem, JH
    Hou, YB
    Ryu, YS
    Lee, HY
    Jeon, HC
    Hyun, JK
    Kang, CK
    Kim, TW
    INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2, 1998, 3436 : 2 - 9
  • [33] Wurtzite CdS on CdTe grown by molecular beam epitaxy
    P. Boieriu
    R. Sporken
    Yan Xin
    N. D. Browning
    S. Sivananthan
    Journal of Electronic Materials, 2000, 29 : 718 - 722
  • [34] THE N-TYPE AND P-TYPE DOPING OF GASB AND ALGASB GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    YAMAMOTO, K
    ASAHI, H
    INOUE, K
    MIKI, K
    LIU, XF
    MARX, D
    VILLAFLOR, AB
    ASAMI, K
    GONDA, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 853 - 857
  • [35] Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy
    Armstrong, A.
    Poblenz, C.
    Mishra, U. K.
    Speck, J. S.
    Ringel, S. A.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06): : 1867 - 1871
  • [36] OBSERVATION OF A 1.2 EV DEFECT PHOTOLUMINESCENCE PEAK IN HEAVILY PLANAR-DOPED N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SADWICK, LP
    REIHLEN, EH
    JAW, DH
    HWU, RJ
    STREIT, DC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (01): : 120 - 123
  • [37] Electrical and photovoltaic properties of CdTe/ZnTe n-i-p junctions grown by molecular beam epitaxy
    Zielony, E.
    Olender, K.
    Placzek-Popko, E.
    Wosinski, T.
    Racino, A.
    Gumienny, Z.
    Karczewski, G.
    Chusnutdinow, S.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (24)
  • [38] n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
    Hageman, PR
    Schaff, WJ
    Janinski, J
    Liliental-Weber, Z
    JOURNAL OF CRYSTAL GROWTH, 2004, 267 (1-2) : 123 - 128
  • [39] Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
    Vogt, A
    Simon, A
    Hartnagel, HL
    Schikora, J
    Buschmann, V
    Rodewald, M
    Fuess, H
    Fascko, S
    Koerdt, C
    Kurz, H
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7715 - 7719
  • [40] GeAs as a novel arsenic dimer source for n-type doping of Ge grown by molecular beam epitaxy
    Kawanaka, M.
    Iguchi, N.
    Fujieda, S.
    Furukawe, A.
    Baba, T.
    Journal of Applied Physics, 1993, 74 (06):