Characterizing Trench-Gate Power Metal-Oxide-Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom

被引：0
|
作者：
Lin, Ming-Jang [1 ]
Liaw, Chorng-Wei [2 ]
Chang, Fang-Long [1 ]
Cheng, Huang-Chung [1 ]
机构：
[1] Dept. of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
[2] Dept. of Electronics Engineering, Institute of Electronics, National Tsing Hua University, Hsinchu, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 11期
关键词：
D O I：
10.1143/jjap.42.6795
中图分类号：
学科分类号：
摘要：
15
引用
收藏
页码：6795 / 6799
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