Optical properties of strained AlGaN and GaInN on GaN

被引：0
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作者：
Takeuchi, Tetsuya [1 ]
Takeuchi, Hideo [1 ]
Sota, Shigetoshi [1 ]
Sakai, Hiromitsu [1 ]
Amano, Hiroshi [1 ]
Akasaki, Isamu [1 ]
机构：
[1] Meijo Univ, Nagoya, Japan
来源：
| 1997年 / JJAP, Minato-ku, Japan卷 / 36期
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摘要：
The composition of alloys in strained ternary alloy layers, AlxGa1-xN (01-xInxN (0<x<0.20), on thick GaN was precisely determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly according to the AlN molar fraction, while that of strained GaInN has a large bowing parameter of 3.2 eV.
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