Theory of activated conduction in a Si single-electron transistor

被引：0
|
作者：
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan [1 ]
机构：
来源：
Microelectron Eng | / 1卷 / 205-207期
关键词：
Activation energy - Electric potential - Heterojunctions - Semiconducting gallium arsenide - Semiconducting silicon - Semiconductor quantum dots;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transport in a silicon single-electron transistor is theoretically studied. By solving a master equation, assuming that the potential barrier has a parabolic potential, we show that the linear conductance has an activated behavior at high temperatures. This result is in quantitative agreement with a recent experimental observation.
引用
收藏
相关论文
共 50 条
  • [31] Thermal Conductance of a Single-Electron Transistor
    Dutta, B.
    Peltonen, J. T.
    Antonenko, D. S.
    Meschke, M.
    Skvortsov, M. A.
    Kubala, B.
    Koenig, J.
    Winkelmann, C. B.
    Courtois, H.
    Pekola, J. P.
    PHYSICAL REVIEW LETTERS, 2017, 119 (07)
  • [32] Broadband single-electron tunneling transistor
    Visscher, EH
    Lindeman, J
    Verbrugh, SM
    Hadley, P
    Mooij, JE
    vanderVleuten, W
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 2014 - 2016
  • [33] The Kondo effect in a single-electron transistor
    Goldhaber-Gordon, D
    Göres, J
    Shtrikman, H
    Mahalu, D
    Meirav, U
    Kastner, MA
    KONDO EFFECT AND DEPHASING IN LOW-DIMENSIONAL METALLIC SYSTEMS, 2001, 50 : 163 - 170
  • [34] Sketched oxide single-electron transistor
    Cheng, Guanglei
    Siles, Pablo F.
    Bi, Feng
    Cen, Cheng
    Bogorin, Daniela F.
    Bark, Chung Wung
    Folkman, Chad M.
    Park, Jae-Wan
    Eom, Chang-Beom
    Medeiros-Ribeiro, Gilberto
    Levy, Jeremy
    NATURE NANOTECHNOLOGY, 2011, 6 (06) : 343 - 347
  • [35] Cotunneling at resonance for the single-electron transistor
    Konig, J
    Schoeller, H
    Schon, G
    PHYSICAL REVIEW LETTERS, 1997, 78 (23) : 4482 - 4485
  • [36] Effective capacitance of a single-electron transistor
    Laakso, M. A.
    Ojanen, T.
    Heikkila, T. T.
    PHYSICAL REVIEW B, 2008, 77 (23):
  • [37] CHARGE SENSITIVITY OF A SINGLE-ELECTRON TRANSISTOR
    HANKE, U
    GALPERIN, YM
    CHAO, KA
    APPLIED PHYSICS LETTERS, 1994, 65 (14) : 1847 - 1849
  • [38] The Kondo effect in a single-electron transistor
    Goldhaber-Gordon, D
    Göres, J
    Shtrikman, H
    Mahalu, D
    Meirav, U
    Kastner, MA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (1-2): : 17 - 21
  • [39] Strong tunneling in the single-electron transistor
    Joyez, P
    Bouchiat, V
    Esteve, D
    Urbina, C
    Devoret, MH
    PHYSICAL REVIEW LETTERS, 1997, 79 (07) : 1349 - 1352
  • [40] Kondo effect in a single-electron transistor
    D. Goldhaber-Gordon
    Hadas Shtrikman
    D. Mahalu
    David Abusch-Magder
    U. Meirav
    M. A. Kastner
    Nature, 1998, 391 : 156 - 159
12345