ANODIC NITRIDATION OF SILICON AND SILICON DIOXIDE.

被引:0
|
作者
Wong, S.Simon [1 ]
Oldham, William G. [1 ]
机构
[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA
关键词
D O I
暂无
中图分类号
学科分类号
摘要
24
引用
收藏
页码:978 / 982
相关论文
共 50 条
  • [21] CLUSTERS IN IONIZATION TRACKS OF ELECTRONS IN SILICON DIOXIDE.
    Bradford, J.N.
    IEEE Transactions on Nuclear Science, 1986, NS-33 (06)
  • [22] HYDROGENATION DURING THERMAL NITRIDATION OF SILICON DIOXIDE
    KUIPER, AET
    WILLEMSEN, MFC
    THEUNISSEN, AML
    VANDEWIJGERT, WM
    HABRAKEN, FHPM
    TIJHAAR, RHG
    VANDERWEG, WF
    CHEN, JT
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2765 - 2772
  • [23] Mechanism of silicon dioxide decoupled plasma nitridation
    Lim, Sang Woo
    Luo, Tien-Ying
    Jiang, Jack
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (12-16): : L413 - L415
  • [24] REACTION ERGODOGRAPHY FOR SILICON-NITRIDE BOND FORMATION BY THE NITRIDATION OF SILICON DIOXIDE
    TACHIBANA, A
    KUROSAKI, Y
    FUENO, H
    SERA, T
    YAMABE, T
    JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (07): : 3029 - 3033
  • [25] THERMAL NITRIDATION OF SILICON AND SILICON DIOXIDE FOR THIN GATE INSULATORS .2.
    NEMETZ, JA
    TRESSLER, RE
    SOLID STATE TECHNOLOGY, 1983, 26 (09) : 209 - 216
  • [26] THERMAL NITRIDATION OF SILICON AND SILICON DIOXIDE FOR THIN GATE INSULATORS .1.
    NEMETZ, JA
    TRESSLER, RE
    SOLID STATE TECHNOLOGY, 1983, 26 (02) : 79 - 85
  • [27] STRUCTURAL DEFECTS AND EXCITATION OF TRIBOLUMINESCENCE IN AMORPHOUS SILICON DIOXIDE.
    Streletskii, A.N.
    Pakovich, A.B.
    Butyagin, P.Yu.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1985, 50 (03): : 57 - 62
  • [28] SEMIEMPIRICAL CALCULATION OF THE PEROXIDE BRIDGE IN GLASSY SILICON DIOXIDE.
    Sokolov, V.O.
    Sulimov, V.B.
    Soviet physics journal, 1987, 30 (04): : 295 - 298
  • [29] NATURE OF INTRINSIC HOLE TRAPS IN THERMAL SILICON DIOXIDE.
    Manchanda, L.
    Vasi, J.
    Bhattacharyya, A.B.
    1600, (52):
  • [30] KINETIC EFFECTS IN THE CATHODOLUMINESCENCE OF AMORPHOUS LAYERS OF SILICON DIOXIDE.
    Goncharov, S.M.
    Gimel'farb, F.A.
    Meil'man, M.L.
    Sidenko, A.M.
    Journal of applied spectroscopy, 1985, 43 (05): : 1227 - 1232