ANODIC NITRIDATION OF SILICON AND SILICON DIOXIDE.

被引：0
|
作者：
Wong, S.Simon [1 ]
Oldham, William G. [1 ]
机构：
[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
24
引用
收藏
页码：978 / 982
相关论文
共 50 条
  • [1] ANODIC NITRIDATION OF SILICON AND SILICON DIOXIDE
    WONG, SS
    OLDHAM, WG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 978 - 982
  • [2] THERMAL NITRIDATION OF ANODIC SILICON DIOXIDE
    CHARTIER, JL
    SERRARI, A
    LEBIHAN, R
    LIGEON, M
    GASPARD, F
    MULLER, F
    APPLIED SURFACE SCIENCE, 1990, 45 (04) : 351 - 354
  • [3] The structure of the gel of silicon dioxide.
    Anderson, JS
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE--STOCHIOMETRIE UND VERWANDTSCHAFTSLEHRE, 1914, 88 (02): : 191 - 228
  • [4] Information on the biochemistry of silicon dioxide.
    Gonnermann, M
    HOPPE-SEYLERS ZEITSCHRIFT FUR PHYSIOLOGISCHE CHEMIE, 1917, 99 (5/6): : 255 - 296
  • [5] CRYSTALLINE ANODIC SILICON DIOXIDE ON SILICON
    KONOVA, AA
    MICHAILOV, MG
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02): : 627 - 633
  • [6] The effect of hydrogen on silicon and silicon dioxide. An introduction.
    Dufour, A
    ANNALES DE CHIMIE ET DE PHYSIQUE, 1906, 9 : 433 - 474
  • [7] Catalytic plasma chemical etching of silicon and silicon dioxide.
    Dikarev, YI
    Surovtsev, IS
    Tsvetkov, SM
    FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS, 2003, 5129 : 288 - 294
  • [8] CURRENT STATUS OF SURFACE NITRIDATION ON SILICON AND SILICON DIOXIDE
    ITO, T
    ISHIKAWA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C101 - C102
  • [9] THERMAL NITRIDATION OF MONOCRYSTALLINE SILICON, POLYCRYSTALLINE SILICON AND SILICON DIOXIDE FILMS
    HABRAKEN, FHPM
    KUIPER, AET
    TAMMINGA, Y
    PHILIPS JOURNAL OF RESEARCH, 1983, 38 (1-2) : 19 - 36
  • [10] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS
    HABRAKEN, FHPM
    KUIPER, AET
    TAMMINGA, Y
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002
12345