Study of the Structural Transformation and Phase Composition of Thin Aluminum Films Containing Silicon.

It is shown that in aluminum-silicon films with a content of 0. 3 and 1. 33 at. % Si applied on the (111) face of single-crystal n-type silicon at 300 plus or minus 20 degree C the silicon is located near the film/n-silicon boundary and is in a polycrystalline state. Annealing (Al plus Si)/n-Si structures for 15 min at 510 degree C causes epitaxial growth of silicon on the (111) face of n-Si, which is accompanied by texture formation in the aluminum layer.