Nucleation mechanism of concave structure on substrate surface in diamond growth by low pressure vapor deposition

被引：0
|
作者：
Yang, Guowei [1 ]
机构：
[1] No.014 Cent, Ministry of Aviation, and Astronautics, Luoyang, China
来源：
Weixi Jiagong Jishu/Microfabrication Technology | 1993年 / 03期
关键词：
Diamond nucleation mechanism - Low pressure vapor deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：83 / 87
相关论文
共 50 条
  • [41] Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition
    Mikka Nishitani-Gamo
    Toshihiro Ando
    Kazuo Yamamoto
    Paul A. Dennig
    Yoichiro Sato
    Journal of Materials Research, 1997, 12 : 1351 - 1355
  • [42] The Effects of Chloromethane on Diamond Nucleation and Growth in a Hot-filament Chemical Vapor Deposition Reactor
    Jih-Jen Wu
    Franklin Chau-Nan Chau-Nan Hong
    Journal of Materials Research, 1998, 13 : 2498 - 2504
  • [43] Chemical vapor deposition diamond nucleation and initial growth on TiZrHfNb and TiZrHfNbTa high entropy alloys
    Zhou, B.
    Wang, Y. S.
    Xue, C.
    Han, C. X.
    Hei, H. J.
    Xue, Y. P.
    Liu, Z. B.
    Wu, Y. X.
    Ma, Y.
    Gao, J.
    Yu, S. W.
    MATERIALS LETTERS, 2022, 309
  • [44] Nucleation kinetics of diamond in hot filament chemical vapor deposition
    Yu, Jie
    Huang, Rong Fang
    Wen, Lishi
    Shi, Changxu
    Materials Research Bulletin, 34 (14): : 2319 - 2325
  • [45] Nucleation kinetics of diamond in hot filament chemical vapor deposition
    Yu, J
    Huang, RF
    Wen, LS
    Shi, CX
    MATERIALS RESEARCH BULLETIN, 1999, 34 (14-15) : 2319 - 2325
  • [46] Kinetic model for diamond nucleation upon chemical vapor deposition
    Yang, GW
    Liu, BX
    DIAMOND AND RELATED MATERIALS, 2000, 9 (02) : 156 - 161
  • [47] The effects of chloromethane on diamond nucleation and growth in a hot-filament chemical vapor deposition reactor
    Wu, JJ
    Hong, FCN
    JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) : 2498 - 2504
  • [48] Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition
    NishitaniGamo, M
    Ando, T
    Yamamoto, K
    Dennig, PA
    Sato, Y
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (05) : 1351 - 1355
  • [49] NUCLEATION AND GROWTH DURING THE CHEMICAL-VAPOR-DEPOSITION OF DIAMOND ON SIO2 SUBSTRATES
    RANKIN, J
    BOEKENHAUER, RE
    CSENCSITS, R
    SHIGESATO, Y
    JACOBSON, MW
    SHELDON, BW
    JOURNAL OF MATERIALS RESEARCH, 1994, 9 (08) : 2164 - 2173
  • [50] NUCLEATION AND GROWTH OF DIAMOND ON CEMENTED CARBIDES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
    MEHLMANN, AK
    FAYER, A
    DIRNFELD, SF
    AVIGAL, Y
    PORATH, R
    KOCHMAN, A
    DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 317 - 322
12345