Growth of diamond films by microwave plasma chemical vapor deposition

被引：0
|
作者：
Gao, Kelin [1 ]
Zhan, Rujuan [1 ]
Xiang, Zhilin [1 ]
Wang, Chunlin [1 ]
Peng, Dingkun [1 ]
Meng, Guongyao [1 ]
机构：
[1] Univ of Science and Technology of, China, Hefei, China
来源：
Vacuum | 1991年 / 42卷 / 16期
关键词：
Diamonds - Synthetic - Films - Chemical Vapor Deposition - Hydrocarbons - Chemical Reactions - Plasmas - Microwaves;
D O I：
10.1016/0042-207x(91)91428-q
中图分类号：
学科分类号：
摘要：
Diamond is a unique and fascinating material because of its high hardness, good thermal conductivity, high electrical resistance and chemical inertness. This kind of film can be grown from the vapor phase at low pressure by several kinds of plasma chemical vapor deposition (CVD) with the decomposition of hydrocarbon and hydrogen. Diamond thin films are produced by microwave plasma chemical vapor deposition (MW PCVD). The deposit is identified by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. During the process of diamond growth, the characteristics of the plasma have been measured by means of the Langmuir double probe and emission spectrometer.
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页码：1084 / 1085
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