Study of sputtered barium strontium titanate and strontium titanate thin films

被引：0

作者：

Baumert, B.A. ^{[1
]}

Chang, L.-H. ^{[1
]}

Matsuda, A.T. ^{[1
]}

Tsai, T.-L. ^{[1
]}

Tracy, C.J. ^{[1
]}

Gregory, R.B. ^{[1
]}

Fejes, P.L. ^{[1
]}

Cave, N.G. ^{[1
]}

Chen, W. ^{[1
]}

Remmel, T. ^{[1
]}

Taylor, D.J. ^{[1
]}

Otsuki, T. ^{[1
]}

Fujii, E. ^{[1
]}

Hayashi, S. ^{[1
]}

Suu, K. ^{[1
]}

机构：

[1] Motorola Semiconductor Products, Sector, Mesa, United States

来源：

Integrated Ferroelectrics | 1997年 / 17卷 / 1 -4 pt 1期

关键词：

Barium compounds - Capacitance - Current density - Ferroelectric materials - Grain size and shape - Lattice constants - Leakage currents - Permittivity - Sputtering - Strontium compounds - Thermal effects - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Sputtered Ba1-xSrxTiO3 (BST) and SrTiO3 (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 120 fF/μm2 for BST films deposited at 600 °C and a high of 27 fF/μm2 for STO films deposited at 450 °C. Leakage current densities at 3.3 V for the most part varied from mid 10-8 to mid 10-6 amps/cm2. All of the dielectrics are polycrystalline, although the lowest temperature STO films have a nearly amorphous layer which impacts their capacitance. Grain size increases with deposition temperature, which correlates to higher dielectric constants. The lattice parameter of the BST films is larger than that of bulk samples. Capacitance, leakage, breakdown, and lifetime results are reported.

引用

页码：165 / 178

共 50 条

[31] Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers
Cole, M. W.
Ngo, E.
Hubbard, C.
Hirsch, S. G.
Ivill, M.
Sarney, W. L.
Zhang, J.
Alpay, S. P.
JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
[32] Switching time of planar ferroelectric capacitors using strontium titanate and barium strontium titanate films
Kozyrev, AB
Soldatenkov, OI
Ivanov, AV
TECHNICAL PHYSICS LETTERS, 1998, 24 (10) : 755 - 757
[33] Switching time of planar ferroelectric capacitors using strontium titanate and barium strontium titanate films
A. B. Kozyrev
O. I. Soldatenkov
A. V. Ivanov
Technical Physics Letters, 1998, 24 : 755 - 757
[34] Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films
Taylor, TR
Hansen, PJ
Pervez, N
Acikel, B
York, RA
Speck, JS
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3390 - 3396
[35] TEM and electrical analysis of sputtered barium strontium titanate (BST) thin films on flexible copper substrates
Laughlin, B
Ihlefeld, J
Maria, JP
FERROELECTRIC THIN FILMS XII, 2004, 784 : 301 - 306
[36] Effects of thermal processing and iron doping in co-sputtered barium strontium titanate thin films
Stemme, F.
Bruns, M.
Gesswein, H.
Schroeder, M.
Sazegar, M.
Drahus, M. D.
Eichel, R. -A.
Paul, F.
Hausselt, J.
Binder, J. R.
JOURNAL OF MATERIALS SCIENCE, 2012, 47 (19) : 6929 - 6938
[37] Effects of thermal processing and iron doping in co-sputtered barium strontium titanate thin films
F. Stemme
M. Bruns
H. Geßwein
M. Schroeder
M. Sazegar
M. D. Drahus
R.-A. Eichel
F. Paul
J. Haußelt
J. R. Binder
Journal of Materials Science, 2012, 47 : 6929 - 6938
[38] Dielectric properties for strontium barium titanate thin films with different thickness
Bi, Jingjing
Shan, Lianwei
Wu, Ze
Fu, Xinghua
Hou, Wenping
FERROELECTRICS, 2018, 529 (01) : 113 - 119
[39] Dry-etching of barium-strontium-titanate thin films
Schneider, S.
Mono, T.
Albrethsen-Keck, B.
Melaku, Y.
Waser, R.
IEEE International Symposium on Applications of Ferroelectrics, 1998, : 51 - 54
[40] The effect of stress on the dielectric properties of barium strontium titanate thin films
Shaw, TM
Suo, Z
Huang, M
Liniger, E
Laibowitz, RB
Baniecki, JD
APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2129 - 2131

← 1 2 3 4 5 →