3-D grid generation for the numerical simulation of semiconductor devices

被引：0
|
作者：
Hitschfeld, N.
机构：
来源：
Informacion Tecnologica | / 6卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Numerical simulation of condensation around the 3-D wing
    Yamamoto, S
    Hagari, H
    Murayama, M
    TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, 2000, 42 (138) : 182 - 189
  • [22] GRID GENERATION AND NUMERICAL SIMULATION OF 2-D RIVER FLOW
    Zhao Ming deng
    Journal of Hydrodynamics(SerB)., 2001, (02) : 50 - 54
  • [23] Numerical simulation of 3-D free shear layers
    Tsai, YP
    PARALLEL COMPUTATIONAL FLUID DYNAMICS: RECENT DEVELOPMENTS AND ADVANCES USING PARALLEL COMPUTERS, 1998, : 609 - 615
  • [24] 3-D Technology in blow moulding: A numerical simulation
    Debbaut, B
    Marchal, T
    ANTEC'97 - PLASTICS SAVING PLANET EARTH, CONFERENCE PROCEEDINGS, VOLS 1 - 3, 1997, : 802 - 806
  • [25] Compatibility of 3-D printed devices in cleanroom environments for semiconductor processing
    Pasanen, T. P.
    von Gastrow, G.
    Heikkinen, I. T. S.
    Vahanissi, V.
    Savin, H.
    Pearce, J. M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 89 : 59 - 67
  • [26] NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES
    BREZZI, F
    MARINI, LD
    PIETRA, P
    COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING, 1989, 75 (1-3) : 493 - 514
  • [27] NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES
    SELBERHERR, S
    LANGER, E
    SIMULATION APPLIED TO MANUFACTURING ENERGY AND ENVIRONMENTAL STUDIES AND ELECTRONICS AND COMPUTER ENGINEERING, 1989, : 291 - 296
  • [28] Simulation of semiconductor devices with a local numerical approach
    Kosec, G.
    Trobec, R.
    ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS, 2015, 50 : 69 - 75
  • [29] A 3-D thermal simulation tool for integrated devices - Atar
    Smy, T
    Walkey, D
    Dew, SK
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2001, 20 (01) : 105 - 115
  • [30] 'Atomistic' mesh generation for the simulation of semiconductor devices
    Aldegunde, M.
    Garcia-Loureiro, A. J.
    Sushko, P. V.
    Shluger, A. L.
    Kalna, K.
    Asenov, A.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 97 - +
12345