Secondary defects in low-energy As-implanted Si

被引：0
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作者：
Tamura, M. [1 ]
Hiroyama, Y. [1 ]
Nishida, A. [1 ]
Horiuchi, M. [1 ]
机构：
[1] Joint Research Cent for Atom, Technology, Ibaraki, Japan
来源：
Applied Physics A: Materials Science and Processing | 1998年 / 66卷 / 04期
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页码：373 / 384
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