Raman study of epitaxial Ga2Se3 films grown by molecular beam epitaxy

被引：0
|
作者：
Yamada, Akira [1 ]
Kojima, Nobuaki [1 ]
Takahash, Kiyoshi [1 ]
Okamoto, Tamotsu [1 ]
Konagai, Makoto [1 ]
机构：
[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 2 B期
关键词：
Semiconducting Gallium Compounds;
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学科分类号：
摘要：
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页码：186 / 188
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