Effects of ion beam mixing on the depth profiles of thin metal layer in TiO2

被引:0
|
作者
Natl Industrial Research Inst of, Nagoya, Nagoya, Japan [1 ]
机构
来源
关键词
Ion beams - Ion bombardment - Light absorption - Metallic films - Metallic superlattices - Mixing - Rutherford backscattering spectroscopy - Sol-gels - Thin films - X ray diffraction analysis - X ray photoelectron spectroscopy;
D O I
暂无
中图分类号
学科分类号
摘要
Thin films of TiO2 prepared by a sol-gel method were irradiated with 100 keV Ar ions. A bilayer (Mo/TiO2) and multilayers (TiO2/Mo,Cr,Ag/TiO2) of the thin metal films and TiO2 were used. After the irradiation, concentration profiles and the structure of the surface layer were studied by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and glancing angle X-ray diffraction (G-XRD). It was found that a ballistic mixing was predominant in the redistribution of Mo and Cr atoms embedded in TiO2, and oxides of Mo and Cr were decomposed in metallic states with increasing ion fluence. In the case of TiO2/Ag/TiO2, Ag colloids were formed in process of a dip-coating of the sol-gel method, and the Ag atoms were dispersed into deeper layer by a grain boundary diffusion. Ion beam mixing in the TiO2 films produced a slight increase in the optical absorption of visible light.
引用
收藏
相关论文
共 50 条
  • [1] Effects of ion beam mixing on the depth profiles of thin metal layer in TiO2
    Miyagawa, S
    Baba, K
    Nakao, S
    Ikeyama, M
    Saitoh, K
    Miyagawa, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4): : 467 - 471
  • [2] Lithium ion penetration depth profiles and reversibility of electrochromic reaction for TiO2 thin films
    Miki Ueda
    Masami Tsukamoto
    Akira Sakai
    Shinjiro Okada
    Journal of Solid State Electrochemistry, 2014, 18 : 2637 - 2645
  • [3] Lithium ion penetration depth profiles and reversibility of electrochromic reaction for TiO2 thin films
    Ueda, Miki
    Tsukamoto, Masami
    Sakai, Akira
    Okada, Shinjiro
    JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2014, 18 (09) : 2637 - 2645
  • [4] AES depth profiles of thin SiC-layers – simulation of ion beam induced mixing
    G. Ecke
    H. Rößler
    V. Cimalla
    J. Liday
    Fresenius' Journal of Analytical Chemistry, 1997, 358 : 355 - 357
  • [5] AES depth profiles of thin SiC-layers - Simulation of ion beam induced mixing
    Ecke, G
    Rossler, H
    Cimalla, V
    Liday, J
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2): : 355 - 357
  • [6] Effects of metal ion dopants on TiO2 photocatalysis
    Yong, L
    Fu, PF
    Dai, XG
    Du, ZW
    PROGRESS IN CHEMISTRY, 2004, 16 (05) : 738 - 746
  • [7] Effect of Ion Beam Bombarding on Stress in TiO2 Thin Films
    Chen, Tao
    Luo, Chongtai
    Wang, Duoshu
    Xiong, Yuqing
    PROCEEDING OF THE FOURTH INTERNATIONAL CONFERENCE ON SURFACE AND INTERFACE SCIENCE AND ENGINEERING, 2011, 18
  • [8] Preparation of TiO2 thin films by ion beam sputtering method
    Kumashiro, Yoshimasa, 1600, (38):
  • [9] Surface nanostructuring of TiO2 thin films by ion beam irradiation
    Romero-Gomez, P.
    Palmero, A.
    Yubero, F.
    Vinnichenko, M.
    Kolitsch, A.
    Gonzalez-Elipe, A. R.
    SCRIPTA MATERIALIA, 2009, 60 (07) : 574 - 577
  • [10] Effect of Ag layer thickness on optical and electrical properties of ion-beam-sputtered TiO2/Ag/TiO2 multilayer thin film
    Rajan Singh
    Mukul Gupta
    S. K. Mukherjee
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 6942 - 6953