共 50 条
- [43] Evidence of existence of different surface states in inp-based high electron mobility transistors (HEMTs) 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 118 - 120
- [44] Numerical simulation of the impact of surface traps on the performance of InP-based high electron mobility transistors PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (10):
- [46] InP-based high electron mobility transistors with a very short gate-channel distance JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2214 - 2218
- [49] A 13.56 MHz Wireless Power Transmission Systems with Enhancement-Mode GaN High Electron Mobility Transistors 2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013), 2013,