Asymmetric Coulomb staircase in a capacitive single electron transistor with an asymmetric bilayer tunnel barrier

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作者：
Nakashima, Hiroshi [1 ]
Uozumi, Kiyohiko [1 ]
机构：
[1] Aoyama Gakuin Univ, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 10 A期
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