Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

被引：0
|
作者：
Barba, D. [1 ]
Salem, B. [1 ]
Morris, D. [1 ]
Aimez, V. [1 ]
Beauvais, J. [1 ]
Chicoine, M. [2 ]
Schiettekatte, F. [2 ]
机构：
[1] Centre de Recherche en Nanofabrication et en Nanocaract´risation, Universit´ de Sherbrooke, Sherbrooke, J1K 2R1, Canada
[2] D̀�partement de Physique, Universit´ de Montŕal, H3C 3J7, Canada
来源：
Journal of Applied Physics | 2005年 / 98卷 / 05期
关键词：
This work was supported by Nano-Québec; the Fonds de Recherche sur la Nature et les Technologies du Québec; and the Natural Sciences and Engineering Research Council of Canada. The authors would like to thank Laurent Isnard and Richard Arès of the Institut des Matériaux et des Systèmes Intelligents for complementary x-ray-diffraction analysis. We are also grateful to Professor Serge Jandl of the University of Sherbrooke for providing us access to the micro-Raman set up;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
28
引用
收藏
相关论文
共 50 条
  • [11] Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing
    Hulko, O
    Thompson, DA
    Lee, ASW
    Simmons, JG
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 179 - 180
  • [12] CWDM Integrated Waveguide Gratings by InGaAsP/InP Quantum Well Intermixing
    Das, Utpal
    Sonkar, Ramesh K.
    2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), 2012,
  • [13] Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells
    Du, Sichao
    Fu, L.
    Tan, H. H.
    Jagadish, C.
    2008 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, 2008, : 32 - 35
  • [14] ION CHANNELING STRAIN-MEASUREMENTS IN INGAAS/INP QUANTUM-WELL STRUCTURES
    COLE, JM
    EARWAKER, LG
    CULLIS, AG
    CHEW, NG
    BASS, SJ
    TAYLOR, LL
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 : 594 - 597
  • [15] Quantum-well Intermixing Process for Large Blueshifting in an Ion-implanted InGaAs/InGaAsP Multiple-quantum-well Structure Using Two-step Annealing
    Byun, Young Tae
    Jhon, Young Min
    Kim, Sun Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (05) : 1189 - 1192
  • [16] Optical confinement via quantum well intermixing on a buried InGaAs/InGaAsP heterostructure
    Haysom, JE
    Delage, A
    Poole, PJ
    Feng, Y
    He, JJ
    Koteles, ES
    Charbonneau, S
    Goldberg, RD
    Mitchell, IV
    APPLICATIONS OF PHOTONIC TECHNOLOGY 3, 1998, 3491 : 398 - 403
  • [17] ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures
    Genest, Jonathan
    Beal, Romain
    Aimez, Vincent
    Dubowski, Jan J.
    APPLIED PHYSICS LETTERS, 2008, 93 (07)
  • [18] DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING
    POOLE, PJ
    CHARBONNEAU, S
    AERS, GC
    JACKMAN, TE
    BUCHANAN, M
    DION, M
    GOLDBERG, RD
    MITCHELL, IV
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2367 - 2371
  • [19] Evolution of InGaAs/InP quantum well intermixing as a function of cap layer
    Carmody, C
    Tan, HH
    Jagadish, C
    COMMAD 2002 PROCEEDINGS, 2002, : 491 - 494
  • [20] INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES BY GA IMPLANTATION
    SUMIDA, H
    ASAHI, H
    YU, SJ
    ASAMI, K
    GONDA, S
    TANOUE, H
    APPLIED PHYSICS LETTERS, 1989, 54 (06) : 520 - 522
12345