CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH VERY THIN GATE OXIDE.

被引:0
|
作者
Hung, K.K. [1 ]
Cheng, Y.C. [1 ]
机构
[1] Univ of Hong Kong, Hong Kong, Univ of Hong Kong, Hong Kong
来源
| 1600年 / 59期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [22] Scalability of Schottky barrier metal-oxide-semiconductor transistors
    Moongyu Jang
    Nano Convergence, 3
  • [23] Carrier Velocity in Amorphous Metal-Oxide-Semiconductor Transistors
    Wang, Xiao
    Dodabalapur, Ananth
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 125 - 131
  • [24] Scalability of Schottky barrier metal-oxide-semiconductor transistors
    Jang, Moongyu
    NANO CONVERGENCE, 2016, 3
  • [25] A PURE METAL POLYCIDE METAL-OXIDE-SEMICONDUCTOR GATE TECHNOLOGY
    SAKIYAMA, K
    YAMAUCHI, Y
    MATSUDA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1685 - 1691
  • [26] PALLADIUM GATE METAL-OXIDE-SEMICONDUCTOR OXYGEN SENSORS
    KARLSSON, J
    ARMGARTH, M
    ODMAN, S
    LUNDSTROM, I
    ANALYTICAL CHEMISTRY, 1990, 62 (05) : 542 - 544
  • [27] WIDEBAND REPEATERS ON BIPOLAR-TRANSISTORS AND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    DYAKONOV, VP
    STERLYAG.AA
    PRIBORY I TEKHNIKA EKSPERIMENTA, 1973, (06): : 99 - 100
  • [28] Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
    Lemme, MC
    Moormann, C
    Lerch, H
    Möller, M
    Vratzov, B
    Kurz, H
    NANOTECHNOLOGY, 2004, 15 (04) : S208 - S210
  • [29] The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta-2O5 gate oxide
    Yu, JC
    Lai, BCM
    Lee, JYM
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 353 - 356
  • [30] EFFECTS OF HIGH-FIELD ELECTRON INJECTION INTO THE GATE OXIDE OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    MORAGUES, JM
    OUALID, J
    JERISIAN, R
    CIANTAR, E
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) : 5078 - 5085