Mobility of minority carriers in silicon within the surface region of MOS devices

被引：0

|

作者：

机构：

来源：

| / 607期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[21] Drift mobility of carriers in porous silicon
N. S. Averkiev
L. P. Kazakova
É. A. Lebedev
N. N. Smirnova
Semiconductors, 2001, 35 : 588 - 590
[22] MOBILITY OF CHARGE CARRIERS IN SILICON CARBIDE
VANDAAL, HJ
PHILIPS RESEARCH REPORTS, 1965, (3S): : 1 - +
[23] Drift mobility of carriers in porous silicon
Averkiev, NS
Kazakova, LP
Lebedev, ÉA
Smirnova, NN
SEMICONDUCTORS, 2001, 35 (05) : 588 - 590
[24] CARRIER TRAPPING IN SILICON MOS DEVICES
SUGANO, T
ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 220 - 241
[25] DEGRADATION OF MOS DEVICES CAUSED BY IRON IMPURITIES ON THE SILICON-WAFER SURFACE
TAKIZAWA, R
NAKANISHI, T
OHSAWA, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C452 - C452
[26] Scaling silicon MOS devices to their limits
Wind, SJ
Frank, DJ
Wong, HS
MICROELECTRONIC ENGINEERING, 1996, 32 (1-4) : 271 - 282
[27] Extraction of experimental mobility data for MOS devices
Hauser, JR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) : 1981 - 1988
[28] INVESTIGATIONS ON DIFFUSION OF MINORITY CARRIERS FROM A POINT ON SILICON
CHAMPNESS, C
CANADIAN JOURNAL OF PHYSICS, 1961, 39 (05) : 754 - &
[29] EFFECTS OF SPACE CHARGE ON MOBILITY DIFFUSION AND RECOMBINATION OF MINORITY CARRIERS
SCALES, JL
WARD, AL
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1692 - +
[30] MOBILITY OF MAJORITY AND MINORITY CARRIERS IN LEAD SELENIDE SINGLE CRYSTALS
BARYSHEV, NS
MAKAROV, AS
SHTIVELM.KY
AVERYANO.IS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 852 - +

← 1 2 3 4 5 →