Mobility of minority carriers in silicon within the surface region of MOS devices

被引：0
|
作者：
机构：
来源：
| / 607期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] TRAPPING OF MINORITY CARRIERS AT A SILICON SURFACE
    PRIMACHENKO, VE
    LIMOVCHENKO, VG
    LYASHENKO, VI
    SNITKO, OV
    SOVIET PHYSICS-SOLID STATE, 1963, 4 (10): : 2145 - 2148
  • [2] METHOD OF MEASURING MOBILITY OF MAJORITY CARRIERS IN SILICON DEVICES
    PALS, JA
    ELECTRONICS LETTERS, 1970, 6 (16) : 503 - &
  • [3] GENERATION OF EXCESS MINORITY CARRIERS IN MOS DEVICES DUE TO GAMMA IRRADIATION.
    Singh, S.K.
    Singh, Keshaw
    Srivastava, R.S.
    Singh, S.P.
    Nigam, A.K.
    Radiation effects letters, 1980, 50 (3-6): : 103 - 104
  • [4] Minority Carrier Annihilation at Crystalline Silicon Surface in MOS Structure
    Furukawa, Jun
    Yoshidomi, Shinya
    Hasumi, Masahiko
    Sameshima, Toshiyuki
    PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS, 2013, : 185 - 188
  • [5] GENERATION OF EXCESS MINORITY-CARRIERS IN MOS DEVICES DUE TO GAMMA-IRRADIATION
    SINGH, SK
    SINGH, K
    SRIVASTAVA, RS
    SINGH, SP
    NIGAM, AK
    RADIATION EFFECTS LETTERS, 1980, 50 (3-6): : 103 - 104
  • [6] Study of time-dependent effect on surface minority carriers of MOS structure
    Liu, Yan-Hong
    Wei, Xi-Wen
    Xu, Ming-Zhen
    Tan, Chang-Hua
    Dalian Ligong Daxue Xuebao/Journal of Dalian University of Technology, 2000, 40 (06): : 661 - 663
  • [7] EFFECT OF MAJORITY CARRIERS ON THE MOBILITY OF MINORITY CARRIERS IN SEMICONDUCTORS
    DYKMAN, IM
    TOMCHUK, PM
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1085 - 1092
  • [8] INFLUENCE OF MAJORITY CARRIERS ON MOBILITY OF MINORITY CARRIERS IN SEMICONDUCTORS
    GRIGOREV, NN
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (12): : 2968 - +
  • [9] A MODIFIED METHOD FOR DETERMINATION OF SURFACE MOBILITY OF CARRIERS IN MOS-TRANSISTORS
    MAJKUSIAK, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02): : 833 - 836
  • [10] EFFECT OF MAJORITY CARRIERS ON MOBILITY OF MINORITY CARRIERS IN SEMICONDUCTORS
    DYKMAN, IM
    TOMCHUK, PM
    SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (05): : 1085 - +
12345