REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY BARRIER DIODES.

被引：0

作者：

Kikuchi, Akira ^{[1
]}

Sugaki, Shojiro ^{[1
]}

机构：

[1] Central Research Laboratory, Hitachi, Limited, Kokubunji, Tokyo 185, Japan

来源：

| 1600年 / 53期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
KIKUCHI, A
SUGAKI, S
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3690 - 3693
[2] PILE UP OF IMPLANTED PHOSPHORUS DURING PALLADIUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
KIKUCHI, A
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3998 - 4000
[3] SCHOTTKY BARRIER DIODES.
Hopper, Charles
New Electronics, 1983, 16 (21):
[4] EFFECTS OF PROCESSING CONDITIONS ON THE CHARACTERISTICS OF PLATINUM SILICIDE SCHOTTKY-BARRIER DIODES
MOY, D
BASAVAIAH, S
CHUANG, CT
LI, GP
HACKBARTH, E
BRODSKY, SB
POLCARI, MR
SOLID-STATE ELECTRONICS, 1988, 31 (05) : 843 - 849
[5] Investigation of noise sources in platinum silicide Schottky barrier diodes
Papatzika, S
Hastas, NA
Angelis, CT
Dimitriadis, CA
Kamarinos, G
Lee, JI
APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1468 - 1470
[6] Effect of grain structure on the electrical characteristics of platinum silicide polysilicon Schottky barrier diodes
Sagara, Kazuhiko, 1600, (138):
[7] RELATIONSHIP BETWEEN JUNCTION RADIUS AND REVERSE LEAKAGE OF SILICIDE SCHOTTKY-BARRIER DIODES.
Drobny, Vladimir F.
1600, (ED-31):
[8] EFFECT OF GRAIN-STRUCTURE ON THE ELECTRICAL CHARACTERISTICS OF PLATINUM SILICIDE POLYSILICON SCHOTTKY-BARRIER DIODES
SAGARA, K
TAMAKI, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (02) : 616 - 619
[9] METAL-POLYACETYLENE SCHOTTKY BARRIER DIODES.
Kanicki, Jerzy
Molecular crystals and liquid crystals, 1983, 105 (1-4): : 203 - 217
[10] Investigation of the Parameters of Schottky-Barrier Diodes.
Wosinski, Tadeusz
Jelenski, Andrzej
Elektronika, 1975, 16 (05): : 195 - 198

← 1 2 3 4 5 →