Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-Si:H/a-Si1-xCx:H multilayers

被引：0
|
作者：
机构：
来源：
| 1600年 / 75期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] INVESTIGATION PROPERTIES OF a-Si1-xCx:H FILMS ELABORATED BY CO-SPUTTERING OF Si AND 6H-SiC
    Keffous, Aissa
    Cheriet, Abdelhak
    Belkacem, Youcef
    Manseri, Amar
    Gabouze, Noureddine
    Kechouane, Mohamed
    Brighet, Amer
    Boukezzata, Assia
    Kaci, Samira
    Menous, Isa
    Nezzal, Ghania
    Guerbous, Lakhdar
    Menari, Hamid
    MODERN PHYSICS LETTERS B, 2010, 24 (19): : 2101 - 2112
  • [42] Modification of the optical and structural properties of a-Si1-xCx:H films by ion implantation
    Dimova-Malinovska, D.
    FUNCTIONAL PROPERTIES OF NANOSTRUCTURED MATERIALS, 2006, 223 : 313 - 322
  • [43] Chemical (dis)order in a-Si1-xCx:H for x<0.6
    Rovira, PI
    Alvarez, F
    PHYSICAL REVIEW B, 1997, 55 (07): : 4426 - 4434
  • [44] Dependence of optical and electrical properties of a-Si1-xCx:H films on thermal annealing
    Ohkubo, Tsutomu
    Motohashi, Mitsuya
    Homma, Kazuaki
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1997, 80 (03): : 30 - 38
  • [45] Dependence of optical and electrical properties of a-Si1-xCx:H films on thermal annealing
    Ohkubo, T
    Motohashi, M
    Homma, K
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1997, 80 (03): : 30 - 38
  • [46] Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence properties
    Boukezzata, A.
    Nezzal, G.
    Guerbous, L.
    Keffous, A.
    Gabouze, N.
    Belkacem, Y.
    Manseri, A.
    Brighet, A.
    Kechouane, M.
    Menari, H.
    JOURNAL OF LUMINESCENCE, 2011, 131 (06) : 1184 - 1188
  • [47] Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1-xCx:H films
    Wang, Y
    Yue, RF
    Li, GH
    Han, HX
    Liao, XB
    APPLIED SURFACE SCIENCE, 2001, 180 (1-2) : 87 - 91
  • [48] Effect of photonic crystal stop-band on photoluminescence of a-Si1-xCx:H
    Rybin, Mikhail V.
    Zherzdev, Alexander V.
    Feoktistov, Nikolay A.
    Pevtsov, Alexander B.
    PHYSICAL REVIEW B, 2017, 95 (16)
  • [49] Effect of vacuum annealing on charge transport and trapping in a-Si1-xCx:H/c-Si heterostructures
    Gomeniuk, Y. V.
    Gordienko, S. O.
    Nazarov, A. N.
    Vasin, A. V.
    Rusavsky, A. V.
    Stepanov, V. G.
    Lysenko, V. S.
    Ballutaud, D.
    Ashok, S.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (02) : 168 - 173
  • [50] PHOTOLUMINESCENCE CHARACTERIZATION OF A-SI1-XCX - H ALLOYS PREPARED BY COSPUTTERING
    PALSULE, C
    GANGOPADHYAY, S
    CRONAUER, D
    SCHRODER, B
    PHYSICAL REVIEW B, 1993, 48 (15): : 10804 - 10814
12345