共 50 条
- [1] EFFECT OF PLASMA-ETCHING, CARBON CONCENTRATION, AND BUFFER LAYER ON THE PROPERTIES OF A-SI-H/A-SI1-XCX-H MULTILAYERSJOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 543 - 548VELASQUEZ, ELZFANTINI, MCACARRENO, MNPPEREYRA, ITAKAHASHI, HLANDERS, R
- [2] On the determination of the interface density of states in a-Si:H/ a-Si1-xCx:H multilayersJournal of Non-Crystalline Solids, 1993, 164-66 (pt 2) : 861 - 864Bertomeu, J.Puidgollers, J.Asensi, J.M.Andreu, J.
- [3] Infrared characterization of a-Si:H/a-Si1-xCx:H interfacesAPPLIED SURFACE SCIENCE, 1997, 108 (02) : 211 - 217Bertomeu, JPuigdollers, JAsensi, JMAndreu, J
- [4] Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applicationsJOURNAL OF APPLIED PHYSICS, 2013, 114 (18)Shin, Hang-BeumSaint John, DavidLee, Myung-YoonPodraza, Nikolas J.Jackson, Thomas N.
- [5] Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications 1600, American Institute of Physics Inc. (114):
- [9] Alternative doped a-Si1-xCx:H and nc-Si1-xCx:H filmsJOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 478 - 482Tews, RSuchaneck, GKottwitz, AAbramov, ASKosarev, AI
- [10] On the structural properties of a-Si1-xCx:H thin filmsJ Appl Phys, 3 (1324-1329):DEMA-UFSCar, Sao Carlos, Brazil
