Ferroelectric-optical memory on ferroelectric thin films

被引：0
|
作者：
Lemanov, V.V. [1 ]
Sotnikov, A.V. [1 ]
Yushin, N.K. [1 ]
机构：
[1] A.F. Ioffe Physical Technical Inst, St Petersburg, Russia
来源：
Ferroelectrics | 1994年 / 157卷 / 1 -4 pt 7期
关键词：
Birefringence - Cooling - Electric fields - Laser beams - Photovoltaic effects - Piezoelectricity - Polarization - Pyroelectricity - Random access storage - Thin films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
New type memory of ferroelectric thin films is proposed. Writing of information is performed by localheating of the film by laser beam up to the Curie temperature or above and cooling the film in external electric field. Reading can be made by nondestructive methods including pyroelectricity, piezoelectricity, birefringence, optical activity and photovoltaic effect.
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页码：371 / 374
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