Structured ultrafast carrier drift velocity in photoexcited zincblende GaN

被引：0
|
作者：
Rodrigues, C.G. [1 ,2 ]
Vasconcellos, A.R. [1 ]
Luzzi, R. [1 ]
Lemos, V. [1 ,3 ]
Freire, V.N. [3 ,4 ]
机构：
[1] Depto. de Fis. do Estado Solido, Inst. de Física Gleb Wataghin, Universidade Estadual de Campinas, BR-13083-970 Campinas, Sao Paulo, Brazil
[2] Depto. de Matemat. e Física, Univ. Catol. de Goiás, BR-75605-010 Goiana, Goias, Brazil
[3] Departamento de Fisica, Universidade Federal do Ceará, Campus do Pici, Caixa Postal 6030, BR-60455-760 Fortaleza, Ceará, Brazil
[4] Departamento de Fisica, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
23
引用
收藏
相关论文
共 50 条
  • [31] Electron drift velocity in n-doped Wurtzite GaN
    Rodrigues, CG
    CHINESE JOURNAL OF PHYSICS, 2006, 44 (01) : 44 - 50
  • [32] Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
    Marcinkevicius, S.
    Kelchner, K. M.
    Kuritzky, L. Y.
    Nakamura, S.
    DenBaars, S. P.
    Speck, J. S.
    APPLIED PHYSICS LETTERS, 2013, 103 (11)
  • [33] Ultrafast electron drift velocity overshoot in 3C-SiC
    Caetano, EWS
    Bezerra, EF
    Freire, VN
    da Costa, JAP
    da Silva, EF
    SOLID STATE COMMUNICATIONS, 2000, 113 (09) : 539 - 542
  • [34] Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique
    Chen, Ke
    Yogeesh, Maruthi Nagavalli
    Huang, Yuan
    Zhang, Shaoqing
    He, Feng
    Meng, Xianghai
    Fang, Shaoyin
    Sheehan, Nathanial
    Tao, Tiger Hu
    Bank, Seth R.
    Lin, Jung-Fu
    Akinwande, Deji
    Sutter, Peter
    Lai, Tianshu
    Wang, Yaguo
    CARBON, 2016, 107 : 233 - 239
  • [35] Effect of Disparate Carrier Velocity in GaN on the Terahertz Characteristics of Double Drift Region Mixed Tunnelling Avalanche Transit Time Diode
    Dash, G. N.
    Panda, P.
    Padhi, S. N.
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 800 - 803
  • [36] Large-amplitude chirped coherent phonons in tellurium mediated by ultrafast photoexcited carrier diffusion
    Kamaraju, N.
    Kumar, Sunil
    Anija, M.
    Sood, A. K.
    PHYSICAL REVIEW B, 2010, 82 (19)
  • [37] Ultrafast carrier dynamics in a p-type GaN wafer under different carrier distributions
    Fang, Yu
    Yang, Junyi
    Yang, Yong
    Wu, Xingzhi
    Xiao, Zhengguo
    Zhou, Feng
    Song, Yinglin
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (04)
  • [38] Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop
    Jhalani, Vatsal A.
    Zhou, Jin-Jian
    Bernardi, Marco
    NANO LETTERS, 2017, 17 (08) : 5012 - 5019
  • [39] Ultrafast carrier-carrier scattering in wide-gap GaN semiconductor laser devices
    Hughes, S
    Kobayashi, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (06) : 733 - 736
  • [40] Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods
    Chen, Weijian
    Wen, Xiaoming
    Latzel, Michael
    Yang, Jianfeng
    Huang, Shujuan
    Shrestha, Santosh
    Patterson, Robert
    Christiansen, Silke
    Conibeer, Gavin
    NANOPHOTONICS AUSTRALASIA 2017, 2017, 10456
12345