MODEL OF IMPURITY DIFFUSION FROM AN OXIDE SOURCE INTO SILICON.

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作者：
Checielewska, Alicja
Pultorak, Jerzy
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来源：
Electron Technology (Warsaw) | 1979年 / 12卷 / 04期
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摘要：
The paper presents a new model of impurity diffusion from an oxide source into silicon. The model takes into account concentration dependence of impurity diffusion coefficient in oxide and silicon, finite thickness of oxide source and the interfacial effects. The model has been verified experimentally for the case of phosphorus diffusion.
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页码：69 / 73
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