QUASICRYSTALLINE PHASE IN Al-Si-Mn SYSTEM PREPARED BY ANNEALING OF AMORPHOUS PHASE.

To prepare a quasicrystalline single phase by taking advantage of the transformation from amorphous to crystalline phase, the authors examined the crystallization behavior of Al-Ge-M and Al-Si-M amorphous alloys and found that a mostly single quasicrystalline phase appears as an intermediate precipitate from the amorphous phase in a limited composition range in the Al-Si-M system. The purpose of this paper is to clarify (1) the composition range in which a quasicrystalline single phase is formed from the amorphous phase in Al-Si-Mn alloys, (2) the transformation behavior of amorphous to quasicrystalline phase, and (3) the differences in the microstructure, hardness, and electrical resistivity between the quasicrystalline and the amorphous phases with the same composition. The specimens used are amorphous in a composition range of 20 to 38 at. pct Si and 8 to 23 at. pct Mn.