High-temperature crack growth in monolithic and SiCw-reinforced silicon nitride under static and cyclic loads

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机构：
[1] Ramamurty, U.
[2] Hansson, T.
[3] Suresh, S.
来源：
Ramamurty, U. | 1600年 / American Ceramic Soc, Westerville, OH, United States卷 / 77期
关键词：
Ceramic materials - Composite materials - Crack propagation - Degradation - Fatigue of materials - Fracture - High temperature effects - Hot pressing - Loads (forces) - Silicon carbide - Stresses;
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摘要：
Experimental results are presented on subcritical crack growth under sustained and cyclic loads in a HIPed Si3N4 at 1450°C and a hot-pressed Si3N4-10 vol% SiCw composite at 1300-1400°C. Static and cyclic crack growth rates are obtained from the threshold for the onset of the stable fracture with different cyclic frequencies and load ratios. Electron microscopy of crack wake contact and crack-tip damage illustrate the mechanisms of subcritical crack growth under static and cyclic loading.
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