Growth and characterization of GaInP layers on GaAs substrates by MOCVD

被引：0
|
作者：
Yu, Qingxuan [1 ]
Peng, Ruiwu [1 ]
Li, Cuiyun [1 ]
Ren, Yaocheng [1 ]
机构：
[1] Shanghai Inst of Metallurgy, Shanghai, China
来源：
Rare Metals | 1993年 / 12卷 / 04期
关键词：
GaInP layer growth - MOCVD method;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
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页码：264 / 266
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