Thickness control of the amorphous buffer layer of hydrogenated nanocrystalline silicon: Effect of the dopant concentration

被引：0

作者：

Gourbilleau, F. ^{[1
]}

Achiq, A. ^{[1
]}

Voivenel, P. ^{[1
]}

Rizk, R. ^{[1
]}

机构：

[1] LERMAT, U. CNRS Associée 6004, ISMRA, 6 Bd Maréchal Juin, FR-14050 Caen Cedex, France

来源：

Solid State Phenomena | 1999年 / 67卷

关键词：

Amorphous materials - Crystallization - Hydrogenation - Nanostructured materials - Plasma applications - Semiconducting films - Semiconductor doping - Silanes - Sputter deposition - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Hydrogenated nanocrystalline silicon films have been deposited by RF sputtering in a pure hydrogen plasma using both lightly and highly doped silicon target with 1015 cm-3 and 1019 cm-3 concentration of boron atoms, respectively. The effect of the doping level and the role of SiH2 species on the thickness and recrystallization of the unintentionally grown amorphous buffer layer have been examined and evidenced by combining infrared absorption measurements and transmission electron microscopy observations.

引用

页码：137 / 142

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