Epitaxial Growth of III-V Semiconductors Using Organometallics and Hydrides.

被引：0
|
作者：
Hallais, Jean-Philippe
机构：
来源：
| 1978年 / 21卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
34
引用
收藏
页码：129 / 138
相关论文
共 50 条
  • [31] Microwave III-V semiconductors for telecommunications and prospective of the III-V industry
    Wu, CS
    PROCEEDING OF THE 2002 3RD INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2002, : 223 - 223
  • [32] Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors
    Frigeri, C
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 1996, 149 : 1 - 6
  • [33] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF III-V COMPOUND SEMICONDUCTORS
    RIDGWAY, MC
    JOHNSON, ST
    ELLIMAN, RG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 454 - 457
  • [34] Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon
    Calvo, Marta Rio
    Rodriguez, Jean-Baptiste
    Cornet, Charles
    Cerutti, Laurent
    Ramonda, Michel
    Trampert, Achim
    Patriarche, Gilles
    Tournie, Eric
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (01):
  • [35] RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS
    DEMEESTER, P
    ACKAERT, A
    COUDENYS, G
    MOERMAN, I
    BUYDENS, L
    POLLENTIER, I
    VANDAELE, P
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1991, 22 (1-2): : 53 - 141
  • [36] Epitaxial Growth of III-V Nanowires on Group IV Substrates
    Bakkers, Erik
    Borgstrom, Magnus
    Verheijen, Marcel
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 223 - 234
  • [37] Role of hydrogen in the growth of III-V compound semiconductors by OMVPE
    Hobson, W.S.
    Materials Science Forum, 1994, 148-4 : 27 - 59
  • [38] Growth of III-V semiconductors and lasers on silicon substrates by MOCVD
    Shi, Bei
    Lau, Kei May
    FUTURE DIRECTIONS IN SILICON PHOTONICS, 2019, 101 : 229 - 282
  • [39] A novel reactor concept for multiwafer growth of III-V semiconductors
    Beccard, R
    Protzmann, H
    Schmitz, D
    Strauch, G
    Heuken, M
    Juergensen, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 198 : 1049 - 1055
  • [40] Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
    Egawa, T
    Ishikawa, H
    Jimbo, T
    Umeno, M
    BULLETIN OF MATERIALS SCIENCE, 1999, 22 (03) : 363 - 367
12345