Photoluminescence investigation of p-type Si-doped AlGaAs grown by molecular beam epitaxy on (1 1 1)A, (2 1 1)A and (3 1 1)A GaAs surfaces

被引：0
|
作者：
Henini, M. [1 ]
Galbiati, N. [1 ]
Grilli, E. [1 ]
Guzzi, M. [1 ]
Pavesi, L. [1 ]
机构：
[1] Univ of Nottingham, Nottingham, United Kingdom
来源：
Journal of Crystal Growth | 1997年 / 175-176卷 / pt 2期
关键词：
M.H. wishes to acknowledge the UK EPSRC. L.P. thanks the Consorzio CRSC for a scholarship. L.P. has been supported by GaAsNet of CNR. Finally the authors would like to thank the NATO for funds enabling the collaboration;
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摘要：
13
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页码：1108 / 1113
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