STUDY OF ISOCHRONAL ANNEALING BEHAVIOR OF NEUTRON IRRADIATED HYDROGEN FZ SILICON BY POSITRON ANNIHILATION.

被引：0
|
作者：
Xiong Xingmin [1 ]
机构：
[1] Acad Sinica, Inst of High Energy Physics, China, Acad Sinica, Inst of High Energy Physics, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 01期
关键词：
HYDROGEN FLOATING-ZONE (FZ) SILICON - ISOCHRONAL ANNEALING BEHAVIOR - NEUTRON IRRADIATED HYDROGEN FZ SILICON - POSITRON ANNIHILATION;
D O I：
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摘要：
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页码：78 / 84
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