Ion beam synthesis of buried FeSi2 in (100) silicon

被引：0
|
作者：
Panknin, D. [1 ]
Wieser, E. [1 ]
Groetzchel, R. [1 ]
Skorupa, W. [1 ]
Baither, D. [1 ]
Bartsch, H. [1 ]
Querner, G. [1 ]
Danzig, A. [1 ]
机构：
[1] Zentralinstitut fur Kernforschung, Rossendorf, Dresden, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1992年 / B12卷 / 1-2期
关键词：
Semiconducting Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：119 / 122
相关论文
共 50 条
  • [41] Β-FeSi2 in (111Si and in (001) Si formed by ion-beam synthesis
    Oostra, D.J.
    Bulle-Lieuwma, C.W.T.
    Vandenhoudt, D.E.W.
    Feiten, F.
    Jans, J.C.
    Journal of Applied Physics, 1993, 74 (07)
  • [42] Ion beam syntheses and microstructure studies of a new FeSi2 phase
    Jin, S
    Li, XN
    Zhang, Z
    Dong, C
    Gong, ZX
    Bender, H
    Ma, TC
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3306 - 3309
  • [43] Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition
    Nakanoya, Takamitsu
    Sasase, Masato
    Yamamoto, Hiroyuki
    Saito, Takeru
    Hojou, Kiichi
    Shinku/Journal of the Vacuum Society of Japan, 2002, 45 (01) : 26 - 31
  • [44] TEM INVESTIGATION OF ION-BEAM SYNTHESIZED SEMICONDUCTING FESI2
    YANG, Z
    HOMEWOOD, KP
    REESON, KJ
    FINNEY, MS
    HARRY, MA
    MATERIALS LETTERS, 1995, 23 (4-6) : 215 - 220
  • [45] Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
    Muroga, M.
    Suzuki, H.
    Udono, H.
    Kikuma, I.
    Zhuravlev, A.
    Yamaguchib, K.
    Yamamoto, H.
    Terai, T.
    THIN SOLID FILMS, 2007, 515 (22) : 8197 - 8200
  • [46] Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers
    P. Schaaf
    M. Milosavljevic
    S. Dhar
    N. Bibic
    K.-P. Lieb
    M. Wölz
    G. Principi
    Hyperfine Interactions, 2002, 139-140 : 615 - 621
  • [47] Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2
    Univ of Surrey, Surrey, United Kingdom
    J Appl Phys, 3 (1958-1963):
  • [48] Structural and optical properties of β-FeSi2 layers grown by ion beam mixing
    Bibic, N
    Dhar, S
    Lieb, KP
    Milosavljevic, M
    Schaaf, P
    Huang, YL
    Seibt, M
    Homewood, KP
    McKinty, C
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 198 - 202
  • [49] Formation of β-FeSi2 with electron beam evaporation
    Misaki, T
    Ohsawa, J
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2004, 87 (01): : 9 - 15
  • [50] Transmission electron microscopy characterisation of ion beam synthesised FeSi2 layers
    Tavares, J
    Bender, H
    Maex, K
    THIN SOLID FILMS, 1996, 277 (1-2) : 90 - 97
12345