Impurity and topological surface states in porous silicon

被引：0

作者：

Ninno, D. ^{[1
]}

Buonocore, F. ^{[1
]}

Cantele, G. ^{[1
]}

Iadonisi, G. ^{[1
]}

机构：

[1] I.N.F.M. and Dipto. di Sci. Fisiche, Università di Napoli, Complesso Univ. di Monte S. Angelo, via Cintia, I-80126 Napoli, Italy

来源：

| 2000年 / 182期

关键词：

Approximation theory - Binding energy - Charge carriers - Electronic density of states - Impurities - Nanostructured materials - Semiconductor quantum wires - Spectroscopic analysis - Surface properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have developed a method, based on the effective mass approximation, for calculating electronic states in an arbitrarily shaped quantum nanostructure. Modelling the average porous silicon nanostructure with a deformed quantum wire, the calculated shallow impurity binding energies are in good agreement with surface photovoltage spectroscopy data. We have also studied a new type of surface carrier localization due to nanostructure surface geometrical irregularities. The implications of the existence of these trapping states are discussed for porous silicon.

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