Impurity and topological surface states in porous silicon

被引：0

作者：

Ninno, D. ^{[1
]}

Buonocore, F. ^{[1
]}

Cantele, G. ^{[1
]}

Iadonisi, G. ^{[1
]}

机构：

[1] I.N.F.M. and Dipto. di Sci. Fisiche, Università di Napoli, Complesso Univ. di Monte S. Angelo, via Cintia, I-80126 Napoli, Italy

来源：

| 2000年 / 182期

关键词：

Approximation theory - Binding energy - Charge carriers - Electronic density of states - Impurities - Nanostructured materials - Semiconductor quantum wires - Spectroscopic analysis - Surface properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have developed a method, based on the effective mass approximation, for calculating electronic states in an arbitrarily shaped quantum nanostructure. Modelling the average porous silicon nanostructure with a deformed quantum wire, the calculated shallow impurity binding energies are in good agreement with surface photovoltage spectroscopy data. We have also studied a new type of surface carrier localization due to nanostructure surface geometrical irregularities. The implications of the existence of these trapping states are discussed for porous silicon.

引用

共 50 条

[1] Impurity and topological surface states in porous silicon
Ninno, D
Buonocore, F
Cantele, G
Iadonisi, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (01): : 285 - 289
[2] SHALLOW IMPURITY SURFACE STATES IN SILICON
SCHECHTER, D
PHYSICAL REVIEW LETTERS, 1967, 19 (12) : 692 - +
[3] SHALLOW IMPURITY SURFACE STATES IN SILICON AND GERMANIUM
SCHECHTER, D
ROMERO, HV
BELL, RJ
SURFACE SCIENCE, 1968, 11 (02) : 352 - +
[4] SURFACE STATES AND PHOTOLUMINESCENCE FROM POROUS SILICON
Islam, Md. Nazrul
Kumar, Satyendra
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 910 - 913
[5] OBSERVATION OF SURFACE AND IMPURITY STATES IN SILICON BY OXIDE LAYER TUNNELING
GRAY, PV
PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 302 - &
[6] Topological nonmagnetic impurity states in topological Kondo insulators
Abele, M.
Yuan, X.
Riseborough, P. S.
PHYSICAL REVIEW B, 2020, 101 (09)
[7] Impurity-induced states on the surface of three-dimensional topological insulators
Biswas, Rudro R.
Balatsky, A. V.
PHYSICAL REVIEW B, 2010, 81 (23):
[8] Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator
Min Zhong
Shuai Li
Hou-Jian Duan
Liang-Bin Hu
Mou Yang
Rui-Qiang Wang
Scientific Reports, 7
[9] Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator
Zhong, Min
Li, Shuai
Duan, Hou-Jian
Hu, Liang-Bin
Yang, Mou
Wang, Rui-Qiang
SCIENTIFIC REPORTS, 2017, 7
[10] Topological surface states revealed by Sb thin films adsorbed with impurity atoms
Lee, Chi-Hsuan
Yang, Chih-Kai
PHYSICAL REVIEW B, 2013, 87 (11):

← 1 2 3 4 5 →