The model of transition from two-dimensional layer to three-dimensional growth at heteroepitaxy of Ge/Si

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Zinov'ev, V.A.
Dvurechenskij, A.V.
Novikov, P.L.
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Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya | 2002年 / 02期
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页码：10 / 14
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