Microscopic analysis of the degradation mechanism of gallium arsenide metal-semiconductor field-effect transistor

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Mitsubishi Electric Corp, Hyogo, Japan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 8卷 / 4301-4305期
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Aging of materials - Amorphous materials - Crystallography - Degradation - Microscopic examination - Raman scattering - Semiconducting gallium arsenide - Transmission electron microscopy;
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