Crystallinity of 3C-SiC films grown on Si substrates

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作者：
Yagi, K. [1 ]
Nagasawa, H. [1 ]
机构：
[1] Hoya Corp, Tokyo, Japan
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
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页码：191 / 194
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