SELECTIVE MOCVD GROWTH OF GaAs ON Si SUBSTRATE WITH SUPERLATTICE INTERMEDIATE LAYERS.

被引：0
|
作者：
Soga, Tetsuo [1 ]
Sakai, Shiro [1 ]
Umeno, Masayoshi [1 ]
Hattori, Shuzo [1 ]
机构：
[1] Nagoya Univ, Nagoya, Jpn, Nagoya Univ, Nagoya, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：252 / 255
相关论文
共 50 条
  • [41] Self-organized growth of InP on GaAs substrate by MOCVD
    Wang, BZ
    Chua, SJ
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 20 - 24
  • [42] MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES
    SOGA, T
    KOHAMA, Y
    UCHIDA, K
    TAJIMA, M
    JIMBO, T
    UMENO, M
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 499 - 503
  • [43] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE
    NONAKA, T
    AKIYAMA, M
    KAWARADA, Y
    KAMINISHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921
  • [44] GROWTH OF GAAS AND INP ON SI USING PLASMA STIMULATED MOCVD
    LEIBER, J
    BRAUERS, A
    HEINECKE, H
    LUTH, H
    BALK, P
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 483 - 489
  • [45] MOCVD GAAS GROWTH ON GE(100) AND SI(100) SUBTRATES
    MIZUGUCHI, K
    HAYAFUJI, N
    OCHI, S
    MUROTANI, T
    FUJIKAWA, K
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 509 - 514
  • [46] VAPOUR-PHASE EPITAXIAL GROWTH OF SUBMICRON GaAs LAYERS AND HIGH RESISTIVITY BUFFER LAYERS.
    Wang Yungchen
    Zhu Yimin
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1981, 2 (03): : 182 - 188
  • [47] Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping
    Li, J. Z.
    Bai, J.
    Hydrick, J. M.
    Park, J. S.
    Major, C.
    Carroll, M.
    Fiorenza, J. G.
    Lochtefeld, A.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (11) : 3133 - 3137
  • [48] MOCVD growth of InN on Si(111) with various buffer layers
    Huang, C. C.
    Chuang, R. W.
    Chang, S. J.
    Lin, J. C.
    Cheng, Y. C.
    Lin, W. J.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (08) : 1054 - 1057
  • [49] Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth
    Soga, T
    Arokiaraj, J
    Taguchi, H
    Jimbo, T
    Umeno, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 220 - 224
  • [50] FORMATION OF A RADIATION POINT DEFECTS ENSEMBLE IN THIN SI+-DOPED GAAS LAYERS.
    Chtcherbatchev, K. D.
    Bublik, V. T.
    Parkhomenko, Yu. N.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1999, 55 : 543 - 543
12345