High-Tc ramp-type Josephson junctions for rapid single flux quantum circuits

被引：0
|
作者：
Huang, M.Q. [1 ]
Ivanov, Z.G. [1 ]
Komissinski, P.V. [1 ]
Mozhaev, P.B. [1 ]
Claeson, T. [1 ]
机构：
[1] Univ of Technology and Univ of, Goteborg, Goteborg, Sweden
来源：
Journal of low temperature physics | 1999年 / 117卷 / 03期
关键词：
Critical current density (superconductivity) - Current voltage characteristics - Heat conduction - High temperature superconductors - Praseodymium alloys - Quantum interference devices - Semiconductor device manufacture - Yttrium barium copper oxides;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ramp-type Josephson junctions with YBCO superconducting electrodes and PrBa2Cu2.6Ga0.4O6+δ (PBGCO) barriers were fabricated and characterized. The YBCO ramp junctions with 25 nm-thick barriers of PBGCO showed typical resistively-shunted-junction (RSJ)-like I-V behavior and 1 σ spread of less than 13% in critical current density. Differential conductance-voltage characteristics registered using a lock-in technique indicate that the resonant tunneling via localized states in the barriers plays a dominant role in the conduction process of the ramp junctions.
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页码：587 / 591
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