In-line monitoring of some planarization processes

被引：0
|
作者：
Tissier, A. [1 ]
Teissier, J.F. [1 ]
Cerruti, P. [1 ]
Eymery, J.M. [1 ]
机构：
[1] CNET, Meylan, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 B期
关键词：
Films - Dielectric - Semiconductor Materials - Etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The processes used for the surface planarization of the interlevel dielectrics which is one of the major problems of the multilevel interconnection CMOS technology, are becoming increasingly sophisticated. As a consequence, the reproducibility of the total process requires an accurate control of these technics in order to increase die yields. The DOPED method, developed for a non-contact on-line monitoring of flow annealing of BPSG films has been applied to the 'cold' planarization techniques implemented in the CNET 0.7 μm technology. Results are obtained for TEOS deposition and etchback techniques and SOG total etchback.
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收藏
页码：3178 / 3181
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